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Journal article Scopus Source The journal / series is indexed in Scopus (SCImago list). The article itself has not been verified. 0 Citations Quartil Q3

Computing epitaxial growth in a tilted MOCVD reactor by a finite element multigrid method

Duque, Jairo
ISLA — Instituto Politécnico de Gestão e Tecnologia
International Journal of Modern Physics C, 2007
DOI: 10.1142/S0129183107011054

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Abstract
A multigrid (MG) numerical solution procedure for a mathematical model for epitaxial growth in metalorganic chemical vapor deposition reactors is developed. The model is governed by the full compressible Navier–Stokes equations for two-dimensional (plane and axisymmetric) laminar flows extended by transport equations for the chemical species, the energy equations and the equation of state, together with boundary conditions providing information on the reactor geometry and experimental conditions. The MG numerical solution is implemented in a finite element procedure that uses the same linear finite elements to discretize both convection and diffusion fluxes by adding to the model a stabilizing term, resulting in easy implementation of the procedure. A deposition process for a model of GaAs growth is calculated with our procedure showing consistency with experimental data.

Keywords

#epitaxial growth #metalorganic chemical vapor deposition #multigrid methods #finite element analysis #Navier-Stokes equations #laminar flow #species transport #energy equation #equation of state #axisymmetric flow #Multigrid method #Discretization #Finite element method #Mechanics #Boundary value problem

Bibliographic Details

Publication Type Journal article
Publication Year 2007
Journal / Conference / Work International Journal of Modern Physics C
Quartile (SCImago) Q3
Scopus Indexing Indexed source (via SCImago)

ISLA Authors & Affiliations

J
Jorge Manuel Pereira Duque
jorge.duque@islagaia.pt ID: FD15-6377-8559
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